MJE350STU
Manufacturer:
On Semiconductor
Mfr.Part #:
MJE350STU
Datasheet:
Description:
BJTs TO-126-3 Through Hole PNP 20 W Collector Base Voltage (VCBO):-300 V Collector Emitter Voltage (VCEO):300 V Emitter Base Voltage (VEBO):-5 V
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -300 V |
| Length | 8 mm |
| Width | 3.25 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -65 °C |
| Number of Pins | 3 |
| Height | 11 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| Polarity | PNP |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | -500 mA |
| Max Power Dissipation | 20 W |
| Power Dissipation | 20 W |
| Max Collector Current | 500 mA |
| Collector Emitter Breakdown Voltage | 300 V |
| Element Configuration | Single |
| Collector Emitter Voltage (VCEO) | 300 V |
| Collector Base Voltage (VCBO) | -300 V |
| Emitter Base Voltage (VEBO) | -5 V |
| hFE Min | 30 |
| Schedule B | 8541290080 |
| Max Cutoff Collector Current | 100 µA |
| Transistor Type | PNP |
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